High power GaSb-based superluminescent diode with cascade cavity suppression waveguide geometry and ultra-low antireflection coating

نویسندگان

چکیده

We report on a GaSb-based superluminescent diode optimized for high-power broadband operation around wavelength of 2 μm. The high optical power was achieved by the high-quality epitaxial InGaSb/AlGaAsSb type-I quantum well gain material, which processed into double-pass amplification configuration. To prevent lasing at current injection while enabling strong amplified spontaneous emission, cascade cavity suppression waveguide geometry designed to connect vertical rear facet with reflectivity-suppressed angled front facet. A Ta2O5/SiO2 ultra-low antireflection coating minimum reflectivity 0.04% applied further suppression. This combination allowed diodes demonstrate record single-transverse-mode output up 152 mW under continuous-wave room temperature, broad spectral band 42 nm full width half maximum. 25% promotion in has been realized compared state-of-the-art devices this range, without sacrificing bandwidth. density characteristics, along good beam quality, are suited absorption spectroscopy applications and hybrid integration silicon technology.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2023

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0157235